The effects of defects on the defect formation energy, electronic band structure, and electron mobility in 4H–SiC

With the first-principle method, we studied effects of type and position defects on defect formation energy, electronic band structure, electron mobility 4-layer hexagonal system silicon carbon (4H–SiC). The vacancy energy is smaller than interstitial energy. C smallest, while Si largest. little affected by position. structure shows semi-metallic property due to defect, it a bandgap antisite defect. changes changes. reduced in varying degrees according different types.